首页|Crystallization of hydrogenated amorphous silicon by rapid thermal method
Crystallization of hydrogenated amorphous silicon by rapid thermal method
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NETL
NSTL
Trans Tech Publications Ltd
Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950℃ for 5 min. The thin film made by RTA was smoothly and perfect structure.
PECVDa-Si: H filmrapid thermal annealing
Ruimin Jin、Dingzhen Li、Lan-li Chen、Xinfeng Guo、Jingxiao Lu
展开 >
Nanyang Institute of Technology, Henan 473004, China Key Laboratory of Material Physics of the Ministry of Education of China, Zhengzhou University, Henan 450052, China
Nanyang Institute of Technology, Henan 473004, China
Key Laboratory of Material Physics of the Ministry of Education of China, Zhengzhou University, Henan 450052, China
NETL
NSTL
Trans Tech Publications Ltd
