首页|Self-similarity of electrochemically-deposited copper films on porous silicon

Self-similarity of electrochemically-deposited copper films on porous silicon

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The micro-structures of electrochemically-deposited copper control electrode on semiconducting porous silicon films were investigated with scanning electron microscopy. Our results showed that smooth control electrode could be grown in areas far from the edge of porous silicon film while irregular electrode was formed on the circular edge of porous silicon films. The self-similarity of the electrochemically-deposited copper control electrode was analyzed in details.

self-similarityporous siliconelectrochemical depositionsimulation

Lan-li Chen、Bao-gai Zhai、Yuan Ming Huang

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Department of Electronics, Nanyang Institute of Technology, Henan 473004, China

Modern Educational Technology Center, Yunnan Normal University, Yunnan 650092, China

College of Physics & Electronic Information, Yunnan Normal University, Yunnan 650092, China

2010

Key engineering materials

Key engineering materials

ISSN:1013-9826
年,卷(期):2010.428/429
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