首页|Self-similarity of electrochemically-deposited copper films on porous silicon
Self-similarity of electrochemically-deposited copper films on porous silicon
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NETL
NSTL
Trans Tech Publications Ltd
The micro-structures of electrochemically-deposited copper control electrode on semiconducting porous silicon films were investigated with scanning electron microscopy. Our results showed that smooth control electrode could be grown in areas far from the edge of porous silicon film while irregular electrode was formed on the circular edge of porous silicon films. The self-similarity of the electrochemically-deposited copper control electrode was analyzed in details.