The Influence of Annealing Treatment on Physics and Electrical Characteristics of Ba(Zr_(0.1)Ti_(0.9))O_3 Ferroelectric Films on ITO/glass Substrate

扫码查看

原文链接

NETL
NSTL
Trans Tech Publications Ltd

外文摘要：Perovskite Ba(Zr_(0.1)Ti_(0.9))O_3 (BZ1T9) ferroelectric thin films well deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices are produced and investigated. The sputtering parameters of as-deposited BZ1T9 thin films were rf power of 160 W, chamber pressure of 10 mTorr, substrate temperature of 550℃, and an oxygen concentration of 40%. From the SEM cross-sectional observation, the deposition rate were about 2.5 nm/min. Additionally, the maximum dielectric constant and leakage current density of annealed BZT films under the rapid temperature annealing would be increased, as the temperature increased to 650℃. Further, the maximum remnant polarization and coercive field of BZT films were found and calculated from the p-E curves.

外文关键词：

Ba(Zr_(0.1)Ti_(0.9))O_3perovskite structureferroelectricITO/glassFeRAM

作者：

Wen-Cheng Tzou、Chien-Min Cheng、Kai-Huang Chen、Hung-Chi Yang、Guan-Hung Shen、Cheng-Fu Yang

展开 >

作者单位：

Department of Electro-Optical Engineering, Southern Taiwan University, Tainan, Taiwan

Department of Electronic Engineering, Southern Taiwan University, Tainan, Taiwan

Department of Electronics Engineering and Computer Science, Tung-Fang Institute of Technology, Kaohsiung, Taiwan

Department of Electrical Engineering, Southern Taiwan University, Tainan, Taiwan

Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan

展开 >

出版年：

2010

DOI：

10.4028/www.scientific.net/KEM.434-435.289

Key engineering materials

ISSN：1013-9826

年,卷(期)：2010.434/435

参考文献量10