首页|Low-Temperature Firing and Microwave Dielectric Properties of Zn_3Nb_2O_8 Ceramics with CuO-V_2O_5-Bi_2O_3
Low-Temperature Firing and Microwave Dielectric Properties of Zn_3Nb_2O_8 Ceramics with CuO-V_2O_5-Bi_2O_3
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The influence of CuO-V_2O_5-Bi_2O_3 addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of Zn_3Nb_2O_8 ceramics were investigated. The co-doping of CuO, V_2O_5 and Bi_2O_3 can significantly lower the sintering temperature of Zn_3Mb_2O_8 ceramics from 1150℃ to 900℃. The Zn_3Nb_2O_8-0.5wt% CuO-0.5wt% V_2O_5-2.0wt% Bi_2O_3 ceramic sintered at 900℃ showed a relative density of 97.1%, a dielectric constant (ε_r) of 18.2, and a quality factor (Q×f) of 36781 GHz. The dielectric properties in this system exhibited a significant dependence on the relative density, content of additives and sintering temperature. The relative density and dielectric constant (ε_r) of Zn_3Nb_2O_8 ceramics increased with increasing CuO-V_2O_5-Bi_2O_3 additions. And also the relative density and dielectric constant of Zn_3Nb_2O_8 ceramics increased by the augment of the sintering temperature.
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