首页|Characterization of Silicon Carbide Grown on RB-SiC by Chemical Vapor Deposition
Characterization of Silicon Carbide Grown on RB-SiC by Chemical Vapor Deposition
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Trans Tech Publications Ltd
Silicon carbide is one of the best materials for satellite mirror and chemical vapor deposition (CVD) is an effective method of preparing SiC whiskers and films. In this paper, SiC whiskers or films were deposited on substrates of RB-SiC in an upright chemical vapor deposition furnace of Φ150mm × 450 mm with methyltrichloride silicane (MTS) as precursor gas and H_2 as carrier gas under dilute gases of different W_2/Ar ratio and different deposition temperature between 1050℃ and 1150℃. The morphology and composition of the CVD-SiC grown on RB-SiC substrate were determined by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. As a result, whisker-like, worm-like or ball-like SiC can be respectively obtained dependent on different deposition conditions such as H_2/Ar ratio and deposition temperature, and the composition of the productions are determined as β-SiC by XRD. Furthermore, the deposition mechanisms of different morphologies of SiC are introduced.
chemical vapor depositionsilicon carbidereaction-bonded SiCSiC whiskers
Meng Fantao、Du Shanyi、Tian Guishan、Zhang Yumin
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Center for Composite Materials , Harbin Institute of Technology, Harbin 150001, China School of Materials Science and Engineering, Shandong University of Technology, Zibo 255049, China
Center for Composite Materials , Harbin Institute of Technology, Harbin 150001, China
School of Materials Science and Engineering, Shandong University of Technology, Zibo 255049, China
NETL
NSTL
Trans Tech Publications Ltd
