首页|Effect of Microstructure on Removal Mechanism of Solid State Sintered Silicon Carbide in Polishing Procedure
Effect of Microstructure on Removal Mechanism of Solid State Sintered Silicon Carbide in Polishing Procedure
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NETL
NSTL
Trans Tech Publications Ltd
Solid state sintered silicon carbide (S-SiC) ceramic is one of the top optical materials for high space reliability and other excellent properties. Two microstructures were produced by sintering under different conditions. The effects of microstructure on removal rates of SiC ceramics during polishing processes were studied. The material removal mechanisms during polishing were analysed and modeled. With the increase of the aspect ratio and grain diameter size during polishing, grain pull-out is more difficult in elongated grains than in exquiaxed grains. The SiC ceramic with high hardness has high removal resistance leading to get bad surface quality under the same mechanical procedure. The samples with elongated microstructure have low hardness and surface toughness.
solid state sintered silicon carbidemicrostructurepolishing
Jianqin Gao、Zhengren Huang、Jian Chen、Guilin Liu、Xuejian Liu
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Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P.R. China School of the Chinese Academy of Sciences, Beijing 100039, P.R. China
Graduate Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P.R. China
NETL
NSTL
Trans Tech Publications Ltd
