W-doped DLC films were synthesized from ethyne and tungsten by ion beam deposition and magnetron sputtering, and the influence of W target current on the structures and the properties of W-doped DLC films were studied. There exist some defects smaller than 3micron in W-doped DLC films and the influence of W target current on the defects is unobvious. The W content in the films is tardily increased with W target current below 3.5A, and then acutely rises with W target current. When target current is below 3.5A, the ratio of sp~3-C to sp~2-C is first decreased and then increased with the rise of target current, and the ratio of WC-C to sp~2-C is close to 0; but when the target is above 3.5A, the ratio of sp~3-C to sp~2-C is decreased and the ratio of WC-C to sp~2-C is augmented with further increasing target current. The hardness and the modulus is first decreased with target current and the minimum value is reached for the W-doped DLC films deposited with a target current of 2.6A. The W-doped DLC films deposited with a target current of 2.6A exhibit the best film-substrate adhesion. The W-doped DLC films deposited with a low target current exhibit a friction coefficient while the wear resistance of the W-doped DLC films deposited with a medium target current of 2.6A is best.
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