首页|Influence of Processing Factors on the Phases and Morphologies of ZnS Optical Thin Films
Influence of Processing Factors on the Phases and Morphologies of ZnS Optical Thin Films
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Trans Tech Publications Ltd
ZnS is one of the most important semiconductors with wide direct band-gap (3.68 eV) and it is widely used as electroluminescence, flat panel display and cathode ray luminous materials. Uniform ZnS optical thin films were deposited on Si (111) substrates by a vacuum evaporation method. The influences of evaporation temperature, deposition time and the distances between substrates and evaporation sources on the phases and morphologies of the ZnS thin films were investigated. The as-prepared thin films were characterized by X-ray diffraction and atomic force microscopy. Results show that the as-prepared thin films are composed of sphalerite ZnS with a little wurtzite phase. The obtained thin films exhibit an oriented epitaxial growth along (111) direction. The evaporation temperature has a great effect on the phases and morphologies of ZnS thin films. Uniform ZnS thin films can be achieved at the evaporation temperature of 1200℃ for 30 min. The crystallization of ZnS thin films improves with the increase of evaporation time.
ZnSthin filmsvacuum evaporation
Wang Yan、Huang Jian-feng、Cao Li-yun、Zhu Hui、Zeng Xie-rong
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Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry, Ministry of Education, Shaanxi University of Science & Technology, Xi'an Shaanxi 710021, China
Shenzhen Key Laboratories of Special Functional Materials, Shenzhen 518086, China
NETL
NSTL
Trans Tech Publications Ltd
