首页|Influence of Annealing Temperatures on the Properties of Dual-Layer W-TiO_2 Thin Films

Influence of Annealing Temperatures on the Properties of Dual-Layer W-TiO_2 Thin Films

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  • Trans Tech Publications Ltd
W-TiO_2 (W, tungsten) dual-layer thin films are deposited by RF magnetron sputtering onto glass substrates and annealed at 150℃～400℃ for 4hrs. The crystal structure, morphology, and trans- mittance of annealed W-TiO_2 dual-layer thin films are investigated by X-ray diffraction, FESEM, and UV-Vis spectrometer, respectively. The annealing temperatures have large effect on the properties of W-TiO_2 dual-layer thin films. The band gap energy values of W-TiO_2 dual-layer thin films are evaluated from (αhv)~(1/2) versus energy plots. The energy gap for un-annealed W-TiO_2 dual-layer thin film is 3.16 eV. As the annealing temperature increases from 150℃ to 400℃, the energy gap decreases from 3.16 eV to 3.10 eV.

tungstenTiO_2dual-layer thin filmsRF sputterenergy gap

Chia-Cheng Huang、Fang-Hsing Wang、Cheng-Fu Yang、Hong-Hsin Huang、Cheng-Yi Chen、Ping-Chih Huang

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Dept. Electrical Engineering, National Chung Hsing University, Taiwan

Dept. Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan

Dept. Chemical and Materials Engineering, Cheng-Shiu University, Kaohsiung, Taiwan

Dept. Electrical Engineering, Cheng-Shiu University, Kaohsiung, Taiwan

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2010

10.4028/www.scientific.net/KEM.434-435.506

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.434/435
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