首页|Bi_4Ti_3O_(12) and Bi_(3.25)La_(0.75)Ti_3O_(12) Thin Films Prepared by RF Magnetron Sputtering

Bi_4Ti_3O_(12) and Bi_(3.25)La_(0.75)Ti_3O_(12) Thin Films Prepared by RF Magnetron Sputtering

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  • Trans Tech Publications Ltd
Bi_4Ti_3O_(12) (BTO) and Bi_(3.25)La_(0.75)Ti_3O_(12) (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi_4Ti_3O_(12) (BTO) and Bi_(3.25)La_(0.75)Ti_3O_(12) (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.

BTO thin filmBLT thin filmRF magnetron sputteringferroelectric property

Jian-Ping Yang、Xing-Ao Li、An-You Zuo、Zuo-Bin Yuan、Weng Zhu-Lin

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College of Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China College of Science, Hubei University for Nationalities, Enshi 445000, China

College of Science, Hubei University for Nationalities, Enshi 445000, China

2010

10.4028/www.scientific.net/KEM.434-435.296

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.434/435
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