首页|Microstructures and Microwave Properties of CaTiO_3 Doped (ZnMg)TiO_3 Dielectrics with CaO-B_2O_3-SiO_2 Addition
Microstructures and Microwave Properties of CaTiO_3 Doped (ZnMg)TiO_3 Dielectrics with CaO-B_2O_3-SiO_2 Addition
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NETL
NSTL
Trans Tech Publications Ltd
The microwave properties and microstructures of (ZnMg)TiO_3-based dielectric prepared by conventional solid-state method were investigated as functions of CaTiO_3 and CaO-B_2O_3-SiO_2 additions. The effects of CaTiO_3 on the crystal phase and the evolution of microstructure of (Zn_(0.65)Mg_(0.35))TiO_3 were studied. The result indicated that CaTiO_3 secondary phase coexists with (ZnMg)TiO_3 main phase in the ZMT-CT ceramics, which confirmed by EDS analysis. Because of CaTiO_3 with large τ_f- value (τ_f = 800 ppm/℃), the temperature coefficient of resonant frequency (τ_f) of ZMT-CT with biphasic structure was adjusted to near zero value. The microwave properties of (Zn_(0.65)Mg_(0.35))TiO_3 ceramics doped with 5wt% CaTiO_3 sintered at 1150℃ were ε ≈ 24, τ_f≈ ±10 ppm/℃, Q×f> 45,000 GHz. Further, it was found that the CaO-B_2O_3-SiO_2 additive could successfully reduce the sintering temperature of (Zn_(0.65)Mg_(0.35))TiO_3-CaTiO_3 ceramics from 1150 to 950℃, and significantly improve the densification of this system, which were densified below 1000℃. This was due to the formation of liquid phases during the sintering observed by SEM. The (Zn_(0.65)Mg_(0.35))TiO_3-0.05CaTiO_3 dielectrics with 1 wt% CaO-B_2O_3-SiO_2 sintered at 950～1000℃ exhibited the optimum microwave properties:ε ≈= 22, Q×f≈ 20,000 GHz and τ_f ≈ ±10 ppm/℃.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
NETL
NSTL
Trans Tech Publications Ltd
