首页|Microstructure and Leakage Current Characteristics of ZrTiO_4 Thin Films by Sol-Gel Method
Microstructure and Leakage Current Characteristics of ZrTiO_4 Thin Films by Sol-Gel Method
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NSTL
Trans Tech Publications Ltd
This paper describes microstructure and leakage current characteristics of ZrTiO_4 thin films on ITO/Glass substrate were deposited by sol-gel method with a fix per-heating temperature of 250℃ for 30min at various annealing temperatures from 600℃ to 800℃ for 1 hr. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by atomic force microscopy. The dependence of the microstructure and leakage current characteristics on annealing temperature was also investigated.
sol-gel methodZrTiO_4 thin film
Cheng-Hsing Hsu、Shih-Yao Lin、Hsin-Han Tung
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Department of Electrical Engineering, National United University, No. 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan
NETL
NSTL
Trans Tech Publications Ltd
