首页|The Influence of Annealing Temperature on the Characteristics of 0.95 (Na_(0.5)Bi_(0.5))TiO_3-0.05 BaTiO_3 Thin Films

The Influence of Annealing Temperature on the Characteristics of 0.95 (Na_(0.5)Bi_(0.5))TiO_3-0.05 BaTiO_3 Thin Films

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  • Trans Tech Publications Ltd
In this study, 0.95 (Na_(0.5)Bi_(0.5))TiO_3-0.05 BaTiO_3 + 1 wt% Bi_2O_3 (NBT-BT3) composition sintered at 1200℃ for 2h is used as target to deposit the NBT-BT3 thin films. The excess lwt% Bi_2O_3 is used to compensate the vaporization of Bi_2O_3 during the deposition process. Ferroelectric NBT-BT3 thin films are deposited on SiO_2/Si and Pt/Ti/SiO_/Si substrates using RF magnetron sputter method using the ceramic target fabricated by ourselves. After depositing under the optimal parameters, the thin films are then heated by a conventional thermal annealing (CFA) process conducted in air at temperatures ranging from 600- 800℃ for 60min. The morphologies of NBT- BT3 thin films are observed using SEM the crystalline structures of NBT-BT3 thin films are investigated using XRD patterns. The large memory window and stable leakage current density examination reveals that NBT-BT3 thin films annealed on 600℃ are better than other thin films under different CTA temperatures. Finally, the top view and cross-sectional images of SEM, memory windows, leakage currents and polarization characteristics of NBT-BT3 thin films are also well developed.

NBT-BT3conventional thermal annealingRF magnetron sputter

Chien-Chen Diao、Chia-Ching Wu、Cheng-Fu Yang、Chao-Chin Chan

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Department of Electronic Engineering, Kao Yuan University, Kaohsiung, Taiwan

Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan

Department of Chemical and Biochemical Engineering, Kao Yuan University, Kaohsiung, Taiwan

2010

10.4028/www.scientific.net/KEM.434-435.263

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.434/435
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