首页|Develop Single-Phase High Dielectric Constant SiO_2-based Composite Gate Dielectric

Develop Single-Phase High Dielectric Constant SiO_2-based Composite Gate Dielectric

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  • NETL
  • NSTL
  • Trans Tech Publications Ltd
In this study, we hoped to find the single-phase high dielectric FET gate-used ceramic materials, which will be used in the sputtering method and have the dielectric constants higher than those of SiO_2 and Si_3N_4. TiO_2, La_2O_3 and ZrO_2 are mixed with SiO_2 to format the (1-x) TiO_2-x SiO_2, (1-x) ZrO_2-x SiO_2 and (1-x) La_2O_3-x SiO_2 compositions, where x is dependent on the different raw materials. The all compositions are calcined at 1100℃ and sintered at 1400℃~ 1550℃ for 2hrs, and the X-ray patterns are used to find the crystal phases of all sintered ceramics. Because of the existence of single-phase, the sintering and dielectric characteristics of 0.3 La_2O_3-0.7 SiO_2 ceramic are further developed.

non-pure SiO_2 gate dielectrichigh dielectric constantLa_2Si_2O_7

Chao-Chin Chan、Yin-Fang Wei、Chien-Chen Diao、Yuan-Tai Hsieh、Ping-Shou Cheng

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Department of Chemical and Biochemical Engineering, Kao Yuan University, Kaohsiung, Taiwan

Department of Electronic Engineering, Kao Yuan University, Kaohsiung, Taiwan

Department of Electronic Engineering, Southern Taiwan University, Tainan, Taiwan

Department of Electronic Engineering, National Kaohsiung University of Applied Science, Kaohsiung, Taiwan

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2010

10.4028/www.scientific.net/KEM.434-435.259

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.434/435
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