首页|Memory Properties of SrBi_2Ta_2O_9/ Ba(Zr_(0.1)Ti_(0.9))O_3 Thin Films Prepared on Si Substrate

Memory Properties of SrBi_2Ta_2O_9/ Ba(Zr_(0.1)Ti_(0.9))O_3 Thin Films Prepared on Si Substrate

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  • Trans Tech Publications Ltd
In this study, ferroelectric thin films of SrBi_2Ta_2O_9(SBT) or bilayered SrBi_2Ta_2O_9/ Ba(Zr_(0.1)Ti_(0.9))O_3 (SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions, and their electrical and ferroelectric characteristics are discussed. Ferroelectric thin films are deposited on Si substrate under the RF power of 80 W, chamber pressure of 10 mTorr, substrate temperature of 550℃, and different oxygen concentrations. The surface morphology of deposited thin films is observed from the FESEM images, and the memory windows and leakage current of the Al/SBT/BZT/Si (MFS) structure are measured by an impendence phase analyzer and a semiconductor parameter analyzer, respectively. The memory window, capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported. We find that the memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure.

SrBi_2Ta_2O_9Ba(Zr_(0.1)Ti_(0.9))O_3bilayerthin filmferroelectric characteristics

Wen-Cheng Tzou、Kai-Huang Chen、Cheng-Fu Yang、Ying-Chung Chen

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Department of Electro-Optical Engineering, Southern Taiwan University, Tainan, Taiwan

Department of Electronics Engineering and Computer Science, Tung-Fang Institute of Technology, Kaohsiung, Taiwan

Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan

Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan

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2010

10.4028/www.scientific.net/KEM.434-435.304

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.434/435
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