首页|The Electrical and Physical Properties of (Ba_(0.7)Sr_(0.3))(Ti_(0.9)Zr_(0.1))O_3 Thin Films under Conventional Annealing Process
The Electrical and Physical Properties of (Ba_(0.7)Sr_(0.3))(Ti_(0.9)Zr_(0.1))O_3 Thin Films under Conventional Annealing Process
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Trans Tech Publications Ltd
In this study, conventional furnace annealing (CFA) is used as the post-treated process, the effects of annealing temperatures on the crystallization and microstructure of (Ba_(0.7)Sr_(0.3))(Ti_(0.9)Zr_(0.1))O_3 (BSTZ) thin films will be developed, and the further influences on the electrical properties of BSTZ thin films are also investigated. A previous study made in our laboratory had shown that the dielectric constant and leakage current density of BSTZ thin film with 640 nm thickness are 192 and 10~(-6) A/cm~2 under the frequency of 100 KHz, respectively. However, the maximum dielectric constant and minimum leakage current density of BSTZ thin films under CFA process are 420 (annealed at 800℃) and 10~(-8) A/cm~2 (700℃), respectively. Besides, the X-ray diffraction (XRD) patterns and the SEM morphology show that crystalline features and grain size of BSTZ thin films increase with the increase of CFA-treated temperatures. These experiment results suggest that a strong correlation exhibits that the physical properties will influence the dielectric properties and nucleation features of BSTZ thin films.
(Ba_(0.7)Sr_(0.3))(Ti_(0.9)Zr_(0.1))O_3conventional furnace annealingleakage current density
Kai-Huang Chen、Cheng-Fu Yang、Chien-Chen Diao
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Department of Electronics Engineering and Computer Science, Tung-Fang Institute of Technology, Kaohsiung, Taiwan
Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan
Department of Electronic Engineering, Kao Yuan University, Kaohsiung, Taiwan
NETL
NSTL
Trans Tech Publications Ltd
