首页|Ferroelectric Properties and Microstructures of Pr_6O_(11)-Doped Bi_4Ti_3O_(12) Thin Films
Ferroelectric Properties and Microstructures of Pr_6O_(11)-Doped Bi_4Ti_3O_(12) Thin Films
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Pr_6O_(11)-doped bismuth titanate (Bi_xPr_yTi_3O_(12): BPT) thin films with random oriention were fabricated on Pt/Ti/SiO_2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with y=0.06, 0.3, 1.2 and 1.5, ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with y=0.6 and 0.9, ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (P_r) and coercive field (E_c) of the BPT Film with y=0.9 were above 35μC/cm~2 and 80KV/cm , respectively. After 3 × 10~(10) switching cycles, 20% degradation of 2P_r is observed in the film with y=0.9.
ferroelectricfilmbismuth titanate
M. Chen、A. H. Cai、X. A. Mei、K. L. Su、C. Q. Huang、Z. M. Wan、J. Liu
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Department of Physics, Hunan Institute of Science and Technology, Yueyang, 414000, China
NETL
NSTL
Trans Tech Publications Ltd
