We have studied the electrical properties of Si p-n junction diodes by deep level transient spectroscopy (DLTS) measurements. The p-n junctions were developed on a Phosphorus doped Si by depositing A1 and annealing at various temperatures. In order to confirm junction formation, current-voltage and capacitance-voltage measurements were made. Two deep levels at E_c-0.17 eV (E1) and E_c-0.44 eV (E2) were observed in the DLTS spectrum. These traps have been characterized by their capture cross-section, activation energy level and trap density. On the basis of these parameters, level E1 can be assigned as V-O complex and E2 as P-V complex. These traps are related to the growth of n-Si wafer and not due to A1 diffusion.
Si p-n junctiondeep levelsDLTSC-V measurementsI-V measurements
S. Siddique、M.M. Asim、F. Saleemi、S. Naseem
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Institute of Industrial Control Systems, P.O. Box 1398, Rawalpindi, Pakistan
Lahore College for Women University, Lahore, Pakistan
Centre for Solid State Physics, Punjab University, Lahore, Pakistan
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