首页|Production, Characterization and Application of Silicon-on-sapphire Wafers
Production, Characterization and Application of Silicon-on-sapphire Wafers
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Trans Tech Publications Ltd
Silicon-on-sapphire (SOS) thin film systems have had specific electronic applications because they can reduce noise and current leakage in metal oxide semiconductor transistors. However, there are some issues in producing defect-free SOS wafers. Dislocations, misfit, micro twins and residual stresses can emerge during the SOS processing and they will reduce the performance of an SOS product. For some reasons, research publications on SOS in the literature are not extensive, and as a result, the information available in the public domain is fragmentary. This paper aims to review the subject matter in an as complete as possible manner based on the published information about the production, characterization and application of SOS wafers.
silicon on sapphirethin filmdefectsresidual stress
Alokesh Pramanik、Mei Liu、L.C. Zhang
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School of Mechanical and Manufacturing Engineering,The University of New South Wales, NSW 2052, Australia
NETL
NSTL
Trans Tech Publications Ltd
