首页|New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization
New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization
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Trans Tech Publications Ltd
We report the growth of SiC layers on low cost p-type silicon (100 and/or 111) substrates maintained at constant temperature (1050 - 1350℃, △T=50℃) in a low pressure chemical vapor deposition reactor. Typical Fourier transform infrared spectrum showed a dominant peak at 800 cm~(-1) due to Si-C bond excitation. Large area x-ray diffraction spectra revealed single crystalline cubic structures of 3C-SiC(111) and 3C-SiC(200) on Si(111) and Si(100) substrates, respectively. Cross-sectional views exposed by scanning electron microscopy display upto 104 μm thick SiC layer. Energy dispersive spectroscopy of the layers demonstrated stiochiometric growth of SiC. Surface roughness and morphology of the films were also checked with the help of atomic force microscopy. Resistivity of the as-grown layers increases with increasing substrate temperature due to decrease of isolated intrinsic defects such as silicon and/or carbon vacanies having activation energy 0.59 ±0.02 eV.
x-ray diffractionEDSFTIRlow pressure chemical vapor depostionatomic force microscopyscanning electron microscopy
F. Iqbal、A. Ali、A. Mehmood、M. Yasin、A. Raja、A.S. Gerges、S. Baang、M. Asghar、M.A. Hasan
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Semiconductor Physics Laboratory, The Islamia University of Bahawalpur 63100, Pakistan
NILOP, Pakistan Institute of Engineering and Applied Sciences, Islamabad, Pakistan
Department of Electrical and Computer Engineering and the Center for Optoelectronic and Optical Communications, University of North Carolina Charlotte, NC 28223
Department of Electronics Engineering, Hallym University, Chunchon 200-702, Korea
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NSTL
Trans Tech Publications Ltd
