首页|Determining the Complete Residual Stress Tensors in SOS Hetero-epitaxial Thin Film Systems by the Technique of X-Ray Diffraction

Determining the Complete Residual Stress Tensors in SOS Hetero-epitaxial Thin Film Systems by the Technique of X-Ray Diffraction

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  • NSTL
  • Trans Tech Publications Ltd
This paper investigates residual stress of epitaxial silicon film on SOS thin film systems. The emphasis was to develop a method to obtain accurately the complete residual stress tensors. It was found that using the multiple asymmetric X-ray diffraction method to measure strains in 13 [hkl] directions, the complete residual stress tensors can be determined reliably. The results were verified by both the Raman Backscattering and the substrate curvature methods.

silicon on sapphireresidual stressmultiple asymmetric X-ray diffraction

Mei Liu、L.C. Zhang、Andrew Brawley、Petar Atanackovic、Steven Duvall

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School of Mechanical and Manufacturing Engineering,The University of New South Wales, NSW 2052, Australia

Sapphicon Semiconductor Pty Ltd,8 Herb Elliott Avenue, Homebush Bay NSW 2127, Australia

2010

10.4028/www.scientific.net/KEM.443.742

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.443
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