Investigation of crystalline structure defects in high-resistance monocrystals of gallium selenide

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外文摘要：The trapping centres in e-GaSe single crystals have been investigated by photo-induced current transient spectroscopy (PICTS). Five traps have been detected and their parameters are presented. It has been demonstrated that photo-induced depolarization oh the sample after processing in the frame of DL TS procedure could be used for determination of the traps parameters. The parameters of trap A_5 obtained from PIC TS and photo-induced depolarization relaxation are in close agreement.

外文关键词：

GaSelayered crystalsPICTStrapsphoto-induced depolarization

作者：

Kerim ALLAKHVERDIEV、Vitalijus BIKBAJEVAS、Vytautas GRIVICKAS、Andrei ODRINSKI、Dilara GUSEINOVA、Eldar SALAEV、Mariya TARASIK、Alexander FEDOTOV

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作者单位：

Marmare Research Centre of TUBITAK, Materials Institute, Gebze/Kocaeli, Turkey, Dr. Vitalijus Bikbajevas

Institute of Materials Research and Applied Sciences, Sauletekio av. 10, Vilnius, Lithuania

Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov av. 13, Vitebsk, Belarus

Insitute of Physics, Azarbaijan Academy of Sciences, H. Javid Av. 33, Baku, Azerbaijan Republic

Departnet of Energy Physics, Belarusian State University, pr. Nezalezhnosti 4, Minsk, Belarus

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出版年：

2010

Przeglad Elektrotechniczny

ISTP

ISSN：0033-2097

年,卷(期)：2010.86(7)