首页|Dielectric Properties of HfO_2 Films Prepared On Flexible Polymer Substrates Using UV Irradiation
Dielectric Properties of HfO_2 Films Prepared On Flexible Polymer Substrates Using UV Irradiation
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Trans Tech Publications Ltd
The HfO_2 films were prepared on the ITO/polyimide substrate using alkoxy-derived precursor solutions at low temperature. The HfO_2 films prepared by UV-assisted process using the precursor solution modified with diethanolamine had smooth surface and RMS roughness values of HfO_2 film were 1.2nm. The electrical properties of HfO_2 films were improved by optimization of preparation condition. The leakage current density at 1V was below 10~(-5)A/cm~2. The dielectric constant was about 20. The loss tangent was below 0.1.
HfO_2thin filmprecursor solutionUV irradiation
Kazuyuki Suzuki、Kazumi Kato
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National Institute of Advanced Industrial Science and Technology (AIST) 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
NETL
NSTL
Trans Tech Publications Ltd
