首页|Relationships between negative differential resistances and resistance switching properties of SrFeO_(2+x) thin films with excess oxygen
Relationships between negative differential resistances and resistance switching properties of SrFeO_(2+x) thin films with excess oxygen
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NETL
NSTL
Trans Tech Publications Ltd
Resistance random access memory (RRAM) is attractive as a next-generation form of nonvolatile memory. We investigated an electric field-induced resistance change of SrFeO_2+x film as a candidate for RRAM material. SrFeO_(2.5-x) film prepared at 300 ℃ showed hysteresis in its current-voltage curve and distinct pulse-switching properties. On the other hand, the sample prepared below 280 ℃ showed hysteresis in its current-voltage curve but didn't show pulse-switching properties. The amount of oxygen in the sample and easiness of oxygen migration play important roles in the resistance-switching properties.
electric memory deviceoxidatio-reductioninterface stateReRAM
NETL
NSTL
Trans Tech Publications Ltd
