首页|Effect of substrate on growth mechanism of flower structured InN fabricated by APHCVD

Effect of substrate on growth mechanism of flower structured InN fabricated by APHCVD

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  • NETL
  • NSTL
  • Trans Tech Publications Ltd
InN belongs to the III-group nitride materials and is known to have a low decomposition temperature which causes intractable grain growth compared to the other nitrides, GaN, A1N, etc. We prepared InNs with a flower-like shape as well as film structure by Atmospheric Pressure Halide CVD process, in which InN is synthesized by CVD under atmospheric pressure. In the present study, growth mechanisms of the flower structured InN prepared on Si(100) and a-plane sapphire substrates is reported.

indium nitridegrowth mechanismflower structurepillar structureatmospheric pressure growthhalide CVD

Naonori Sakamoto、Haruka Sugiura、Desheng Fu、Naoki Wakiya、Hisao Suzuki

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Department of Materials Science and Chemical Engineering, Shizuoka University, 3-5-1 Naka-ku, Hamamtsu, Shizuoka, Japan

Graduate School of Science and Technology, Shizuoka University, 3-5-1 Naka-ku, Hamamtsu, Shizuoka, Japan

Division of Global Research Leaders, Shizuoka University, 3-5-1 Naka-ku, Hamamtsu, Shizuoka, Japan

2010

10.4028/www.scientific.net/KEM.445.209

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.445
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