首页|Dielectric Properties of Highly (001)-plane Oriented SrBi_4Ti_4O_(15) Thin Films
Dielectric Properties of Highly (001)-plane Oriented SrBi_4Ti_4O_(15) Thin Films
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NETL
NSTL
Trans Tech Publications Ltd
Thin films of a bismuth layer-structured dielectric oxides (BLSD), SrBi_4Ti_4O_(15), with preferential crystal orientation were prepared by means of chemical solution deposition (CSD) technique on (111)Pt/(100)Si substrate with bottom nucleation layers of conductive perovskite oxides, LaNiO_3 and SrRuO_3. CSD technique was utilized for the film preparation of SrBi_4Ti_4O_(15). These films possessed highly crystal orientation of (00l) BLSD planes parallel to the substrate surface. The leakage current densities of the SrBi_4Ti_4O_(15) films on (100)SrRuO_3//(100)LaNiO_3/(111)Pt/Ti/(100)Si and on (100)LaNiO_3/(111)Pt/Ti/(100)Si were approximately 10~(-6) and 10~(-7) A/cm~2 respectively. The dielectric constants of these films in a frequency range of 10~2 - 10~6 Hz were from 310 to 350 and 250 to 260 respectively. The value of capacitance change of these films in the range from 20 to 300 ℃ was about +8 and +5% respectively.
NETL
NSTL
Trans Tech Publications Ltd
