首页|Comparison of Thermal Stability of Epitaxially Grown (La_(0.5)Sr_(0.5))CoO_3 and (La_(0.6)Sr_(0.4))MnO_3 Thin Films Deposited on Si Substrate

Comparison of Thermal Stability of Epitaxially Grown (La_(0.5)Sr_(0.5))CoO_3 and (La_(0.6)Sr_(0.4))MnO_3 Thin Films Deposited on Si Substrate

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  • Trans Tech Publications Ltd
Thermal stability of bottom electrode thin films (La_(0.5)Sr_(0.5))CoO_3 (LSCO) and (La_(0.6)Sr_(0.4))MnO_3 (LSMO) were investigated. The crystallization and surface morphology of the heterostructure were characterized using x-ray diffraction and atomic force microscopy. Resistivity of the LSCO thin film was 25 Ωcm. However, the resistivity of LSCO thin film increases sharply with annealing temperature. The LSMO thin film has high resistivity (100 mΩcm). The film does not decompose after thermal processing at 900 ℃. To confirm thermal stability, we examined the effect of post annealing at various temperatures on the morphology and resistivity. Results showed that LSMO has higher thermal stability than that of LSCO.

bottom electrodethin filmepitaxial growthPLDmultiferroic

Shigeki Sawamura、Naonori Sakamoto、Desheng Fu、Kazuo Shinozaki、Hisao Suzuki、Naoki Wakiya

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Department of Materials Science and Chemical Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan

Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan

2010

10.4028/www.scientific.net/KEM.445.160

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.445
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