首页|Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-Sic Utilizing Fe Abrasive Particles

Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-Sic Utilizing Fe Abrasive Particles

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  • NETL
  • NSTL
  • Trans Tech Publications Ltd
We have developed advanced lapping and polishing methods for silicon carbide (SiC) substrates using an Fe abrasive particles and hydrogen peroxide (H2O2) solution. In this method, a SiC surface is oxidized by hydroxyl radicals (OH*), which was generated by Fe catalyst reactions, and the oxide layer on the SiC is mechanically and/or chemically removed by Fe abrasive particles and solution [1-4]. In this study, we applied this planarization method for lapping and polishing SiC surface, in which catalytically generated hydroxyl radicals were utilized to oxidize the surface of a SiC wafer. The processed surfaces were observed by optical interferometric microscope, Nomarski differential interference contrast. These observations showed that surface roughness and flatness of a SiC substrate were markedly improved and scratch-free SiC surface was obtained. These results provide useful information for preparing a high-efficiency and high-accuracy SiC substrate.

lappingpolishingsilicon carbide (SiC)hydroxyl radical (OH*)

Akihisa Kubota、Masahiko Yoshimura、Takashi Watayo、Yoshitaka Nakanishi、Mutsumi Touge

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Dept. of Mechanical System Engineering, Graduate School of Science and Technology, Kumamoto University, Kurokami 2-39-1 Kumamoto City, 860-8555, Japan

Dept. of Mechanical System Engineering, Faculty of Engineering, Kumamoto University, Kurokami 2-39-1 Kumamoto City, 860-8555, Japan

2010

10.4028/www.scientific.net/KEM.447-448.146

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.447/448
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