首页|Fabrication of Damage-free Curved Silicon Crystal Substrate for a Focusing X-ray Spectrometer by Plasma Chemical Vaporization Machining

Fabrication of Damage-free Curved Silicon Crystal Substrate for a Focusing X-ray Spectrometer by Plasma Chemical Vaporization Machining

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  • NETL
  • NSTL
  • Trans Tech Publications Ltd
In the X-ray fluorescence analysis on sub-micron particle, application of the doubly curved crystal (DCC) spectrometer with Johansson-type geometry is effective to improve the lowest limit of detection because DCC makes it possible to focus and monochromatize an X-ray beam simultaneously. A strain-free crystal is essential for the high-performance focusing crystal spectrometer. We propose the application of the open-air type numerically controlled plasma chemical vaporization machining (NC-PCVM), which utilizes neutral reactive species generated by atmospheric pressure plasma, to fabricate the DCC substrate. By applying NC-PCVM technique, a curvature radius error of 0.08% was obtained, and there was no degradation of the crystallinity of the Si (111) substrate.

doubly curved crystaljohansson typeplasma chemical vaporization machiningX-ray fluorescence analysisfocusing

Mao Hosoda、Kazuaki Ueda、Mikinori Nagano、Nobuyuki Zettsu、Shoichi Shimada、Kazuo Taniguchi、Kazuya Yamamura

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Research Center for Ultra-precision Science and Technology, Graduate School of Engineering, Osaka University, Yamadaoka 2-1, Suita, Osaka 565-0871, Japan

Osaka Electro-Communication University, Neyagawa, Osaka, 572-8530, Japan

Institute of X-ray Technologies Co., Ltd., Toyonaka, Osaka, 561-0855, Japan

2010

10.4028/www.scientific.net/KEM.447-448.213

Key engineering materials

Key engineering materials

ISSN：1013-9826
年,卷(期)：2010.447/448
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