首页|Effects of 120 keV nitrogen and its fluence on the structural,electrical, and optical properties of ZnO film
Effects of 120 keV nitrogen and its fluence on the structural,electrical, and optical properties of ZnO film
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NSTL
Elsevier
P-type ZnO film was obtained by N-implantation at energy of 120 keV with annealing at 850 ℃ in oxygen. Room temperature Hall effect measurements revealed that the carrier concentration and mobility was 9.95×10~(18) cm~(-3) and 14.3 cm~2/vs, respectively, in the implanted ZnO with optimal fluence of 10~(15) N/cm~2, where more N acceptors were activated as confirmed by X-ray diffraction and pho-toluminescence. The increase of lattice constants and appearance of emission peaks at 3.26 and 3.18 eV after implantation indicated that the p-type ZnO was realized by substitution of N atom for O sublattice.
ZnOn-implantationp-typesecond phaseluminescence
Kim Wang、Zhibo Ding、Tianxiang Chen、Di Chen、Shude Yao、Zhuxi Fu
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School of Physics, Peking University, Beijing 100871, PR China
Department of Physics, University of Science and Technology of China, Hefei 230026, PR China
NETL
NSTL
Elsevier
