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Thermally driven ballistic rectifier

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The response of electric devices to an applied thermal gradient has, so far, been studied almost exclusively in two-terminal devices. Here we present measurements of the response to a thermal bias of a four-terminal, quasiballistic junction with a central scattering site. We find a novel transverse thermovoltage measured across isothermal contacts. Using a multiterminal scattering model extended to the weakly nonlinear voltage regime, we show that the device's response to a thermal bias can be predicted from its nonlinear response to an electric bias. Our approach forms a foundation for the discovery and understanding of advanced, nonlocal, thermoelectric phenomena that in the future may lead to novel thermoelectric device concepts.

thermoelectric and thermomagnetic effectsballistic transportrectificationthermoelectric devices

J. Matthews、D. Sanchez、M. Larsson、H. Linke

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Physics Department and Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1274, USA

Instituto de Fisica Interdisciplinar y Sistemas Complejos IFISC (CSIC-UIB), E-07122 Palma de Mallorca, Spain

Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, Box 118, S-221 00, Lund, Sweden

Physics Department and Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1274, USA,Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, Box 118, S-221 00, Lund, Sweden

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2012

Physical review, B. Condensed matter and materials physics

Physical review, B. Condensed matter and materials physics

ISSN:1098-0121
年,卷(期):2012.85(20)
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