首页|REL-MOS—A Reliability-Aware MOS Transistor Model

REL-MOS—A Reliability-Aware MOS Transistor Model

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This paper presents a new approach for compact modeling of aging and radiation effects for MOS transistors including process variation and environmental influences. This approach can be used in common design flows for analog integrated circuits. Moreover, the aging behavior of whole circuits can be analyzed without the need for abstractions or extrapolation. Only one common physically motivated transistor parameter is used in order to model radiation and degradation mechanisms.

AgingMOSFETIntegrated circuit modelingThreshold voltageDegradation

Theodor Hillebrand、Steffen Paul、Dagmar Peters-Drolshagen

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Institute of Electrodynamics and Microelectronics, University of Bremen, Bremen, Germany

2019

10.1109/TED.2018.2877594

IEEE transactions on electron devices

IEEE transactions on electron devices

EI
ISSN：0018-9383
年,卷(期)：2019.66(1)
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