首页|Improvement of the electroluminescence performance from Er-doped Al_2O_3 nanofilms by insertion of atomic Ga_2O_3 layers

Improvement of the electroluminescence performance from Er-doped Al_2O_3 nanofilms by insertion of atomic Ga_2O_3 layers

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Metal-oxide-semiconductor light-emitting devices (MOSLEDs) based on erbium doped Al_2O_3 nanofilms still suffer from insufficient and unstable electrical injection. Here, Al_2O_3/Ga_2O_3∶Er nanolaminate films are fabricated by atomic layer deposition on silicon, in which the insertion of atomic Ga_2O_3 layers greatly improves the tolerance to the electric field and electron injection of the Al_2O_3∶Er MOSLEDs, thus leading to the outstanding electroluminescence (EL) performance. The maximum injection current is raised from 0.21 A/cm~2 up to 1.05 A/cm~2 with the optical power density reaching 10.23 mW/cm~2. Much higher excitation efficiencies are also achieved with an external quantum efficiency of 14.2% and a power efficiency of 0.16%. Moreover, the operation time of the prototype Al_2O_3/Ga_2O_3∶Er MOSLEDs is enhanced 21 times compared with the devices without Ga_2O_3. In addition, the Al_2O_3/Ga_2O_3∶Er nanolaminate devices can realize EL under alternating-current excitation. This work supplies a promising route to improve the EL performance of rare earth doped Al_2O_3 nanofilms for the applications in optoelectronics.

Kang Yuan、Li Yang、Yang Yang、Jiaming Sun

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School of Materials Science and Engineering, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University,Tianjin 300350, China

School of Materials Science and Engineering, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University,Tianjin 300350, China,School of Materials Science and Engineering, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University,Tianjin 300350, China

2021

10.1063/5.0064221

Applied physics letters

Applied physics letters

EISCI
ISSN：0003-6951
年,卷(期)：2021.119(20)
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