首页|Investigating the impact of Cs doping on physical properties and unveiling its potential as a UV detector on ZnO thin films

Investigating the impact of Cs doping on physical properties and unveiling its potential as a UV detector on ZnO thin films

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Herein, we present a study on the influence of Cs doping concentration on the physical properties of ZnO films. The films were deposited using the spray pyrol-ysis technique with consistent deposition parameters, while varying the Cs concentration from 1 to 5 weight percentages (wt%). X-ray diffraction (XRD) analysis revealed the presence of mixed phases in the ZnO films, including Zinc blende (ZB) and Wurtzite (WU) phases. To determine the crystallite size, two methods were employed: Scherrer's equation and Williamson-Hall equation. Scherrer's equation demonstrated inconsistent changes in the crystallite size of the cubic and hexagonal phases with varying Cs content. Notably, the Cs-lwt% film exhibited the smallest crystallite size, with an average value of 29.4 nm. Conversely, Williamson-Hall analysis showed a reduction in crystallite size from 42 nm for pure film to 17.2 nm for Cs-5wt% film. Scanning electron microscopy (SEM) images indicated that the grain size exceeded the crystallite size. The elemental composition analysis using energy-dispersive X-ray spectroscopy (EDX) confirmed the successful incorporation of Cs into the deposited films. Moreover, investigations into the optical band gap values revealed a decrease in both pure and Cs-doped films as Cs concentration increased. Lastly, we evaluated the sensing performance of all films under 365nm UV light at different applied voltages (10, 20, and 30V). Remarkably, the Cs-lwt% film displayed minimal rise and decay times compared to other films which exhibited higher values for both parameters.

Faeza Alkorbi、Sherif M. Mostafa、Moustafa M. Ahmed、Ahmed A. Aboud

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Department of Chemistry, Faculty of Sharourah's Science and Arts, Empty Quarter Research Center, Najran University, Sharourah, Saudi Arabia

Department of Physics, Faculty of Science, Beni-Suef University, Beni Suef, Egypt

2023

Journal of materials science. Materials in electronics

Journal of materials science. Materials in electronics

ISSN:0957-4522
年,卷(期):2023.34(36)
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