首页|Strained AlGaInAs on InP: Bandgap dependence on composition-Model benchmark and optimization

Strained AlGaInAs on InP: Bandgap dependence on composition-Model benchmark and optimization

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Influence of chemical composition on the bandgap of AlGaInAs deposited on InP is often calculated using models for unstrained composition and then corrected for strain-induced bandgap energy changes using deformation potentials. This method relies on up to 25 coefficients, many of which are burdened with large uncertainty. In this paper, a large set of experimental data is used to verify the accuracy of existing approaches and to search for optimal deformation potentials. It is shown that the main source of inaccuracy is not the deformation potentials, but the unstrained bandgap formulas. Additionally, a novel model is proposed, yielding the highest accuracy on our dataset. For the first time, composition determination of a quaternary alloy on InP is reported using inductively coupled plasma-optical emission spec-trometry, which is used as a benchmark for modeling.

Marcin Zyskowski、Nick de Louw、Steven Kleijn、Francisco Javier Diaz Otero

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SMART Photonics, High Tech Campus 37, 5656 AE Eindhoven, The Netherlands||Universidade de Vigo, atlanTTic Research Centre, Maxwell s/n, University Campus, E36310 Vigo, Spain

SMART Photonics, High Tech Campus 37, 5656 AE Eindhoven, The Netherlands

Universidade de Vigo, atlanTTic Research Centre, Maxwell s/n, University Campus, E36310 Vigo, Spain

2023

10.1063/5.0173760

Journal of applied physics

Journal of applied physics

SCI
ISSN：0021-8979
年,卷(期)：2023.134(24)
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