Abstract
The high built-in polarization field is a fingerprint of Ⅲ-nitride heterostructures. Alloy composition and doping profile significantly affect the magnitude of the electric field present in subsequent layers, but the sign of the electric field is usually defined by substrate polarity and external bias. Here, we propose to utilize acceptor and donor doping concentrations exceeding 10~(20) cm~(-3) to obtain a high junction field that can solely abolish built-in polarization for a polar (0001) InGaN/GaN quantum well (QW). We have used photoluminescence (PL), time-resolved PL (TRPL), and contactless electroreflectance in order to gain insight into the strength of the electric field present in the grown heterostructures. Good match between expected and measured electric field values was obtained. A dramatic decrease in the luminescence lifetime for a flat QW was confirmed using TRPL. The presented results open a way to realize devices that profit from the low built-in field, like photodetectors, using abundant polar substrates.
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