首页|Researchers Submit Patent Application, 'System And Method For Determining Target Feature Focus In Image-Based Overlay Metrology', for Approval (USPTO 20240020353)
Researchers Submit Patent Application, 'System And Method For Determining Target Feature Focus In Image-Based Overlay Metrology', for Approval (USPTO 20240020353)
扫码查看
点击上方二维码区域,可以放大扫码查看
原文链接
NETL
NSTL
From Washington, D.C., NewsRx journalists report that a patent application by the inventors Lavert, Etay (Milpitas, CA, US); Manassen, Amnon (Haifa, IL); Safrani, Avner (Misgav, IL); Sanko, Dimitry (Vallejo, CA, US); Simon, Yossi (Milpitas, CA, US), filed on January 16, 2023, was made available online on January 18, 2024. No assignee for this patent application has been made. News editors obtained the following quote from the background information supplied by the inventors: “Image-based overlay metrology may typically include determining relative offsets between two or more layers on a sample based on relative imaged positions of features of an overlay target in the different layers of interest. The accuracy of the overlay measurement may thus be sensitive to image quality associated with imaged features on each sample layer, which may vary based on factors such as a depth of field or location of the plane (e.g., focal position) with respect to the sample. Accordingly, overlay metrology procedures typically include tradeoffs between image quality at particular sample layers and throughput. For example, it may be the case that overlay measurements based on separate images of each sample layer may provide the highest quality images of overlay target features. However, capturing multiple images per target may reduce throughput. By way of another example, overlay measurements based on a single image capturing features on multiple layers may provide relatively higher throughput, but may require reference measurements based on external tools or full-wafer measurements to provide a desired measurement accuracy. Therefore, it would be desirable to provide a system and method for curing defects such as those identified above.”