首页|Research from Hangzhou Dianzi University in Machine Learning Provides New Insigh ts (Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S [ [22] ] and h [ [21] ] : An Effective M achine Learning Approach)
Research from Hangzhou Dianzi University in Machine Learning Provides New Insigh ts (Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S [ [22] ] and h [ [21] ] : An Effective M achine Learning Approach)
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By a News Reporter-Staff News Editor at Robotics & Machine Learning Daily News Daily News-Fresh data on artificial intelligence are presented in a new report. According to news reporting out of Hangzhou, Peop le's Republic of China, by NewsRx editors, research stated, “In this work, for the first time, a machine learning behavioral modeling methodology based on gate recurrent unit (GRU) is developed and used to model and then analyze the kink ef fects (KEs) in the output reflection coefficient $(S_{ 22})$ and the short-circuit current gain $ (h_{21})$ of an advanced mi crowave transistor.”
Hangzhou Dianzi UniversityHangzhouPeople's Republic of ChinaAsiaCyborgsEmerging TechnologiesMachine Learning
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