首页|Patent Application Titled 'A Machine Learning Model Using Target Pattern And Ref erence Layer Pattern To Determine Optical Proximity Correction For Mask' Publish ed Online (USPTO 20240119582)
Patent Application Titled 'A Machine Learning Model Using Target Pattern And Ref erence Layer Pattern To Determine Optical Proximity Correction For Mask' Publish ed Online (USPTO 20240119582)
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Reporters obtained the following quote from the background information supplied by the inventors: “Alithographic projection apparatus can be used, for example, in the manufacture of integrated circuits (ICs).In such a case, a patterning d evice (e.g., a mask) may contain or provide a circuit pattern correspondingto a n individual layer of the IC (“design layout”), and this circuit pattern can be transferred onto a targetportion (e.g., comprising one or more dies) on a subst rate (e.g., silicon wafer) that has been coatedwith a layer of radiation-sensit ive material (“resist”), by methods such as irradiating the target portionthrou gh the circuit pattern on the patterning device. In general, a single substrate contains a pluralityof adjacent target portions to which the circuit pattern is transferred successively by the lithographicprojection apparatus, one target p ortion at a time. In one type of lithographic projection apparatuses,the circui t pattern on the entire patterning device is transferred onto one target portion in one go; suchan apparatus is commonly referred to as a wafer stepper. In an alternative apparatus, commonly referredto as a step-and-scan apparatus, a proj ection beam scans over the patterning device in a given referencedirection (the “scanning” direction) while synchronously moving the substrate parallel or anti -parallel tothis reference direction. Different portions of the circuit pattern on the patterning device are transferredto one target portion progressively. S ince, in general, the lithographic projection apparatus will have amagnificatio n factor M (generally<1), the speed F at which the substrat e is moved will be a factor Mtimes that at which the projection beam scans the patterning device. More information with regard tolithographic devices as descr ibed herein can be gleaned, for example, from U.S. Pat. No. 6,046,792,incorpora ted herein by reference.
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