首页|New Findings from Purdue University in the Area of Machine Learning Published (F erroelectric capacitors and field-effect transistors as in-memory computing elem ents for machine learning workloads)
New Findings from Purdue University in the Area of Machine Learning Published (F erroelectric capacitors and field-effect transistors as in-memory computing elem ents for machine learning workloads)
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By a News Reporter-Staff News Editor at Robotics & Machine Learning Daily News Daily News – New research on artificial intelligenc e is the subject of a new report. According to news reporting out of Purdue Univ ersity by NewsRx editors, research stated, “This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate machine learning ( ML) workloads.” Funders for this research include Semiconductor Research Corporation.
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