首页|New Findings from Foshan University Describe Advances in Chemical Vapor Depositi on (Machine Learning Models In the Process of Metal Organic Chemical Vapor Depos ition Epitaxial Manufacturing of Gallium Arsenide)
New Findings from Foshan University Describe Advances in Chemical Vapor Depositi on (Machine Learning Models In the Process of Metal Organic Chemical Vapor Depos ition Epitaxial Manufacturing of Gallium Arsenide)
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By a News Reporter-Staff News Editor at Robotics & Machine Learning DailyNews - Current study results on Nanotechnology - Chemica l Vapor Deposition have been published.According to news reporting from Foshan, People’s Republic of China, by NewsRx journalists, researchstated, “Metal-orga nic chemical vapor deposition (MOCVD) is a vapor-phase epitaxial growth techniqu ecommonly used in industry and academia to manufacture high-quality Gallium Ars enide (GaAs) compoundsemiconductor materials. In the actual industrial GaAs MOC VD epitaxial production process, a largeamount of process parameters, sensor da ta, epitaxial wafer testing data, etc. are generated.”
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