首页|Researchers Submit Patent Application, 'Integrated Method And Tool For High Qual ity Selective Silicon Nitride Deposition', for Approval (USPTO 20240249934)
Researchers Submit Patent Application, 'Integrated Method And Tool For High Qual ity Selective Silicon Nitride Deposition', for Approval (USPTO 20240249934)
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News editors obtained the following quote from the background information suppli ed by the inventors:“Semiconductor technology has advanced at a rapid pace and device dimensions have shrunk with advancingtechnology to provide faster proces sing and storage per unit space. In NAND devices, the string currentneeds to be high enough to obtain sufficient current to differentiate ON and OFF cells. The string currentis dependent on the carrier mobility which is enhanced by enlarg ing the grain size of the silicon channel.
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