摘要
由一名新闻记者-机器人与机器学习日报的工作人员新闻编辑每日新闻-机器学习的最新研究结果已经发表。据新闻报道NewsRx记者在利奥本报道，研究称，“数值模拟”常用于研究和优化复杂且难以原位检测的物理气相输运(PVT)法生长SiC单晶。由于工艺和质量相关包括生长速率和缺陷形成在内的各个方面都受到热场的强烈影响,精确地纳入温度影响因素对于开发可靠的模拟模型至关重要。
Abstract
By a News Reporter-Staff News Editor at Robotics & Machine Learning DailyNews Daily News – Current study results on Machine Learn ing have been published. According to newsreporting originating in Leoben, Aust ria, by NewsRx journalists, research stated, “Numerical simulationsare frequent ly utilized to investigate and optimize the complex and hardly in situ examinabl e PhysicalVapor Transport (PVT) method for SiC single crystal growth. Since var ious process and quality-relatedaspects, including growth rate and defect forma tion, are strongly influenced by the thermal field, accuratelyincorporating tem perature-influencing factors is essential for developing a reliable simulation m odel.”
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