首页|Bannari Amman Institute of Technology Researchers Add New Findings in the Area o f Machine Learning (TCAD-enabled machine learning framework for DC and RF perfor mance evaluation of In- GaAs sub-channel DG-HEMTs)
Bannari Amman Institute of Technology Researchers Add New Findings in the Area o f Machine Learning (TCAD-enabled machine learning framework for DC and RF perfor mance evaluation of In- GaAs sub-channel DG-HEMTs)
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By a News Reporter-Staff News Editor at Robotics & Machine Learning DailyNews Daily News – Data detailed on artificial intelligen ce have been presented. According to newsreporting from the Bannari Amman Insti tute of Technology by NewsRx journalists, research stated, “Thisresearch presen ts a machine learning (ML)-based model that determines the DC and RF characteris ticsof InGaAs sub-channel double gate high electron mobility transistors (DG-HE MTs) to optimize the devicestructure.”
Bannari Amman Institute of TechnologyC yborgsEmerging TechnologiesMachine Learning
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