Bannari Amman Institute of Technology Researchers Add New Findings in the Area o f Machine Learning (TCAD-enabled machine learning framework for DC and RF perfor mance evaluation of In- GaAs sub-channel DG-HEMTs)
Bannari Amman Institute of Technology Researchers Add New Findings in the Area o f Machine Learning (TCAD-enabled machine learning framework for DC and RF perfor mance evaluation of In- GaAs sub-channel DG-HEMTs)
由一名新闻记者-机器人与机器学习日报的工作人员新闻编辑每日新闻-关于人工智能的详细数据已经呈现。据新闻报道NewsRx记者从Bannari Amman Contutte of Technology的报道中说，“这是一个很好的例子。”研究提出了一种基于机器学习(ml)的模型,该模型确定直流和射频特性InGaAs子沟道双栅高电子迁移率晶体管(dg-He MTs)优化器件结构。
Abstract
By a News Reporter-Staff News Editor at Robotics & Machine Learning DailyNews Daily News – Data detailed on artificial intelligen ce have been presented. According to newsreporting from the Bannari Amman Insti tute of Technology by NewsRx journalists, research stated, “Thisresearch presen ts a machine learning (ML)-based model that determines the DC and RF characteris ticsof InGaAs sub-channel double gate high electron mobility transistors (DG-HE MTs) to optimize the devicestructure.”
Key words
Bannari Amman Institute of Technology/C yborgs/Emerging Technologies/Machine Learning
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