首页|Synthesis of Highly Anisotropic 2D Insulator CrOCl Nanosheets for Interfacial Symmetry Breaking in Isotropic 2D Semiconductors

Synthesis of Highly Anisotropic 2D Insulator CrOCl Nanosheets for Interfacial Symmetry Breaking in Isotropic 2D Semiconductors

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  • NETL
  • NSTL
  • Wiley
Chromium oxychloride (CrOCl)， a van der Waals antiferromagnetic insulator，has attracted significant interest in 2D optoelectronic， ferromagnetic， andquantum devices。 However， the bottom–up preparation of 2D CrOCl remainschallenging， limiting its property exploration and device application。 Herein，the controllable synthesis of 2D CrOCl crystals by chemical vapor deposition isdemonstrated。 The combination reaction of precursors together with the spaceconfinedgrowth strategy， providing stable and stoichiometric growth conditions，enable a robust synthesis of high-crystallinity CrOCl nanosheets withregular rhombus-like morphology and uniform thickness。 By tuning the growthtemperature from 675 to 800 ℃， the thickness of CrOCl nanosheets can becontinuously modulated from 10。2 to 30。8 nm， with the domain size increasingfrom 16。9 to 25。5 μm。 The as-grown CrOCl nanosheets exhibit significant structural/optical anisotropy， ultrahigh insulativity， and superior air stability。 Furthermore，a MoS2/CrOCl heterostructure with single-mirror symmetry stacking andultrastrong interfacial coupling is built to realize interfacial symmetry breaking，a novel interface phenomenon that converts MoS2 from isotropy to anisotropy。Consequently， the MoS2/CrOCl heterostructure device achieves polarizationsensitivephotodetection and bulk photovoltaic effect， which are nonexistentin high-symmetry 2D materials。 This work paves the way for the futureexploration of CrOCl-based 2D physics and devices via symmetry engineering。

2D materialsanisotropyCrOClCVD growthsymmetry breaking

Yue Tang、Yue Ping、Xiaoxin Yang、Jiabao Xing、Jiabiao Chen、Xiao Wang、Jiangbo Lu、Hongmei Jing、Kaiqiang Liu、Jinxiong Wu、Xing Zhou、Tianyou Zhai、Hua Xu

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Key Laboratory of Applied Surface and Colloid Chemistry of Ministry ofEducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi’an 710119, P. R. China

Shenzhen Key Laboratory ofNanobiomechanicsShenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen 518055, P. R. China

School of Materials Science and EngineeringNankai UniversityTianjin 300350, P. R. China

School of Physics and Information TechnologyShaanxi Normal UniversityXi’an 710119, P. R. China

State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan 430074, P. R. China

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2025

10.1002/adma.202405358

Advanced Materials

Advanced Materials

ISSN：0935-9648
年,卷(期)：2025.37(5)
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