首页|Electrical Spin State Manipulation in All-Magnet Heterojunctions Using a Ferromagnetic Spin Source

Electrical Spin State Manipulation in All-Magnet Heterojunctions Using a Ferromagnetic Spin Source

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  • Wiley
The ability to electrically manipulate spin states in magnetic materials isessential for the advancement of energy-efficient spintronic device， which istypically achieved in systems composed of a spin source and a magnetictarget， where the magnetic state of the target is altered by a charge current。While theories suggest that ferromagnets could function as more versatilespin sources， direct experimental studies involving only the spin source andtarget layers have been lacking。 Here electrical manipulation of spin states innoncolinear antiferromagnet Mn_3Sn using ferromagnets (Ni， Fe， NiFe， CoFeB)as the spin sources is reported。 Both field-free switching and switching withan assistive field are achieved in Mn3Sn/ferromagnet bilayers， where theswitching polarity correlates with the sign of anomalous Hall effect of theferromagnets。 The experimental findings can be accounted for by thepresence of spin currents arising from spin-dependent scattering within theferromagnets。 This finding provides valuable insights into the underlyingmechanisms of spin-conversion in ferromagnets， offering an alternative spinsource for novel technological applications。

anomalous hall effectcurrent-induced switchingferromagnetsnoncollinear antiferromagnetsspin current

Hang Xie、Zhiqiang Mu、Yuxin Si、Jiaqi Wang、Xiangrong Wang、Yihong Wu

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Department of Electrical and Computer EngineeringNational University of SingaporeSingapore117583, Singapore

State Key Laboratory of Materials for Integrated CircuitsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050, China

School of Science and EngineeringChinese University ofHong Kong (Shenzhen)Shenzhen 51817, China||Department of PhysicsTheHong Kong University of Science and TechnologyClearWater Bay, Kowloon,Hong Kong, China

Department of Electrical and Computer EngineeringNational University of SingaporeSingapore117583, Singapore||National University of Singapore (ChongQing) Research InstituteChongqing Liang JiangNew Area,Chongqing401123, China

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2025

10.1002/adma.202408340

Advanced Materials

Advanced Materials

ISSN：0935-9648
年,卷(期)：2025.37(5)
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