首页|Analysis of the Voltage Ramp Rate Effects on the Programming Characteristics of Bipolar-Type Memristive Devices

Analysis of the Voltage Ramp Rate Effects on the Programming Characteristics of Bipolar-Type Memristive Devices

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We investigate in this letter the role the voltage ramp rate plays in the conduction and programming characteristics of bipolar-type memristive devices. It is shown that speeding up the writing or erasing process of a memristor is beneficial in terms of energy consumption but has a side cost associated with power dissipation. This happens because of the dynamical aspects of the set and reset transitions which are ultimately dictated by the physics of metal ions and oxygen vacancies migration. It is shown that by adding a constant base voltage to the voltage sweep, shorter programming times can be achieved but no significant impact on the power dissipation-energy consumption relationship is observed. Modeling and simulations are carried out with the aid of the Dynamic Memdiode Model and its implementation in LTspice using the Method of Elementary Solvers. Since the device model parameters and simulation conditions can vary in a wide range, the complete schematics are provided so that the interested readers can test different casuistries by themselves.

VoltageMathematical modelsProgrammingMemristorsIntegrated circuit modelingRandom access memorySwitchesPower dissipationIonsEnergy consumption

E. Miranda、E. Piros、F. L. Aguirre、T. Kim、P. Schreyer、J. Gehrunger、T. Schwarz、T. Oster、K. Hofmann、J. Suñé、C. Hochberger、L. Alff

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Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Cerdanyola del Vallès, Spain

Institute of Materials Science, Technische Universität Darmstadt, Darmstadt, Germany

Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Cerdanyola del Vallès, Spain|Intrinsic Semiconductors Technologies Ltd., London, U.K.

Department of Electrical and Information Engineering, Technische Universität Darmstadt, Darmstadt, Germany

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2025

10.1109/TNANO.2025.3556856

IEEE transactions on nanotechnology

IEEE transactions on nanotechnology

ISSN：
年,卷(期)：2025.24(1)
  • 24