首页|Improvement of Surface Roughness in SiO2 Thin Films via Deuterium Annealing at 300 °C
Improvement of Surface Roughness in SiO2 Thin Films via Deuterium Annealing at 300 °C
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NETL
NSTL
IEEE
Recently, deuterium annealing at a reduced temperature range of 300 °C has been proposed to enhance SiO2 gate dielectrics and the Si/SiO2 interface, thereby improving device reliability. As a further investigation into deuterium annealing, for the first time this study compared deuterium absorption characteristics with various SiO2 dielectrics formed by wet oxidation, dry oxidation, low-pressure chemical vapor deposition (LPCVD), and plasma-enhanced chemical vapor deposition (PECVD). Deuterium annealing can also be used to reduce the roughness and improve the uniformity of SiO2 dielectric films. Surface roughness of various samples was measured and quantitatively compared using atomic force microscopy (AFM) after deuterium annealing.
NETL
NSTL
IEEE
