首页|Realization of Compact High-Performance EAM Based on Numerical Analysis of ITO, VO2 and Graphene on SiO2 Platform

Realization of Compact High-Performance EAM Based on Numerical Analysis of ITO, VO2 and Graphene on SiO2 Platform

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  • NETL
  • NSTL
  • IEEE
Plasmonic based electro-absorption modulators (EAMs) has paved the way for high-speed photonic integrated circuits (PICs). This paper demonstrates the numerical analysis and the structural design of the EAM using various plasmonic materials, such as vanadium dioxide (VO2), indium-tin-oxide (ITO) and graphene, to modulate signals traveling through the waveguide on an SiO2 platform. It also explores key performance metrics, including the extinction ratio (ER) and the figure-of-merit (FOM), which is related to the device's insertion loss (IL). By optimizing the structural parameters and utilizing the plasmonic materials, the device characteristics, especially the effective-mode-index (EMI), is modified to attain the epsilon-near-zero (ENZ) condition. The ITO-based EAM attains a high ER of 22.24 dB/μm with a FOM of 482.45, while the graphene-ITO based EAM obtains an ER of 20.31 dB/μm and a FOM of 296.06 at 1.55 μm wavelength. Both devices have an energy consumption per bit (Ebit) below 2.20 fJ/bit and modulation frequency ($f$) exceeding 1300 GHz at an IL $ $ 0.07 dB/μm. The investigated EAMs hold potential for future-generation PICs.

Indium tin oxidePlasmonsPermittivityElectro-absorption modulatorsOptical ring resonatorsModulationElectromagnetic interferenceOptical sensorsOptical modulationOptical interferometry

Himanshu R. Das、Haraprasad Mondal、Rajeev Kumar

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Department of Electronics and Communication Engineering, School of Engineering, Central University of Karnataka, Kadaganchi, India

Department of Electronics and Communication Engineering, Dibrugarh University, Dibrugarh, India|Institute of Engineering and Technology, Dibrugarh University, Dibrugarh, India

Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Sri City, Chittoor, Sathyavedu, India

2025

10.1109/TNANO.2025.3552525

IEEE transactions on nanotechnology

IEEE transactions on nanotechnology

ISSN：
年,卷(期)：2025.24(1)
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