首页|High-temperature reliability of Ni/Ti/Nb ohmic contact on p-type 4H-SiC
High-temperature reliability of Ni/Ti/Nb ohmic contact on p-type 4H-SiC
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In this study, the thermal stability of Ni/Ti and Ni/Ti/Nb ohmic contact on p-type 4H-SiC were investigated for 100 h at 400 ℃ in N_2 environment. The results demonstrated that lower contact resistance and higher thermal stability could be achieved with the Ni/Ti/Nb candidate. After 100 h aging, the specific contact resistance of the Ni/Ti/Nb sample slightly increased from 2.56 × 10~(-3) to 3.04 × 10~(-3) Ω cm~2 . X-ray diffraction results showed that Ni_2Si, Ti_3SiC_2 and Nb_6C_5 compounds contributed to low contact resistance and high-temperature reliability. By adding Nb, the surface of the Ni/Ti/Nb/4H-SiC ohmic contact becomes smoother than that of the Ni/Ti/4H-SiC ohmic contact. The metal/4H-SiC interface of the ohmic contacts was observed after 100 h aging by using TEM measurement. For the Ni/Ti/Nb sample, the excess carbon atoms were collected by the formation of Nb-C compounds and then increased high temperature reliability and reduced contact resistivity.
Vu Thi Ha、Vuong Van Cuong、Takamichi Miyazaki、Shin-Ichiro Kuroki
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Research Institute for Semiconductor Engineering,Hiroshima University,1-4-2 Kagamiyama,Higashi-Hiroshima,Hiroshima,739-8527,Japan
School of Engineering,Tohoku University,Aramaki,Aoba-ku,Sendai,980-8579,Japan
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